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| Preliminary SIDC10D120H6 Fast switching diode chip in EMCON-Technology FEATURES: * 1200V EMCON technology 120 m chip * soft, fast switching * low reverse recovery charge * small temperature coefficient A This chip is used for: * EUPEC power modules and discrete devices Applications: * SMPS, resonant applications, drives C Chip Type SIDC10D120H6 VR 1200V IF 15A Die Size 3.2 x 3.2 mm2 Package sawn on foil Ordering Code Q67050-A4112A001 MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallisation Cathode metallisation Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 3.2 x 3.2 10.24 / 6.5 2.48 x 2.48 120 150 180 1480 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag -system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, 500m 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C m mm deg mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 4412S, Edition 1, 8.01.2002 Preliminary SIDC10D120H6 Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current limited by Tjmax Single pulse forward current (depending on wire bond configuration) Symbol VRRM IF I FSM I FRM Tj , Ts t g Condition Value 1200 15 Unit V tP = 10 ms sinusoidal tbd 30 -55...+150 A Maximum repetitive forward current limited by Tjmax Operating junction and storage temperature C Static Electrical Characteristics (tested on chip), Tj=25 C, unless otherwise specified Parameter Reverse leakage current Cathode-Anode breakdown Voltage Forward voltage drop Symbol IR V Br VF Conditions V R= 1 2 0 0 V I R= 0 . 8 m A I F= 1 5 A Tj= 2 5 C Tj= 2 5 C Tj= 2 5 C 1200 1.6 Value min. Typ. max. 27 Unit A V V Dynamic Electrical Characteristics, at Tj = 25 C, unless otherwise specified, tested at component Parameter Reverse recovery time Symbol t rr1 t rr2 Peak recovery current IRRM1 IRRM2 Reverse recovery charge Qrr1 Qrr2 Peak rate of fall of reverse di r r 1 /dt recovery current di r r 2 /dt Softness S1 S2 I F =15A di/dt=600A/s V R =600V I F =15A di/dt=600A/s VR = 6 0 0 V I F =15A di/dt=600A/s VR = 6 0 0 V I F =15A di/dt=600A/s VR = 6 0 0 V I F =15A di/dt=600A/s VR = 6 0 0 V Conditions Tj = 2 5 C Tj = 1 2 5 C Tj = 2 5 C Tj = 1 2 5 C Tj= 2 5 C Tj= 1 2 5 C T j = 25 C Tj= 1 2 5 C Tj= 2 5 C Tj= 1 2 5 C Value min. Typ. tbd max. Unit ns 17 A 21 1.8 C 3.4 tbd A / s tbd 1 Edited by INFINEON Technologies AI PS DD HV3, L 4412S, Edition 1, 8.01.2002 Preliminary SIDC10D120H6 CHIP DRAWING: 2,48 mm 3,20 mm Edited by INFINEON Technologies AI PS DD HV3, L 4412S, Edition 1, 8.01.2002 Preliminary SIDC10D120H6 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet INFINEON TECHNOLOGIES / EUPEC tbd Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pruffeld Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strasse 53 D-81541 Munchen (c) Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies AI PS DD HV3, L 4412S, Edition 1, 8.01.2002 |
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